El-Nagar Hoda, El-Sadek M S Abd, Ibrahim E M M, Elnobi Sahar
Nanomaterials Lab., Physics Department, Faculty of Science, South Valley University, Qena, 83523, Egypt.
Physics Department, Faculty of Science, Galala University, Galala City, Egypt.
Sci Rep. 2025 Aug 20;15(1):30614. doi: 10.1038/s41598-025-14376-3.
Polyvinyl Alcohol (PVA) has garnered significant attention in the field of flexible optoelectronics due to its unique properties. This study investigates the effect of incorporating tin oxide (SnO) nanoparticles (NPs) with various concentrations (0, 2, 3, 4, and 5 wt%) on structural, optical, and dielectric properties of PVA films synthesized via the solution casting technique. XRD analysis revealed a 28% increase in crystallite size (from 25.74 to 32.88 nm) and reduced dislocation with rising SnO content, indicating enhanced structural ordering. Scanning electron microscopy (SEM) was confirmed homogeneous nanoparticle (NP) distribution at ≤ 3 wt% but aggregation for 5 wt%. Fourier-transform infrared (FT-IR) and Raman spectroscopy were verified hydrogen bonding between SnO and PVA hydroxyl groups. Optical band gap energy was decreased systematically from 4.59 eV (pure PVA) to 4.18 eV (5 wt% SnO), confirming enhanced semiconducting behavior. Photoluminescence (PL) intensity was quenched significantly own to SnO-PVA cross-linking, with new SnO-related emission peaks emerging at 432 nm. The dispersion and the dielectric parameters were determined as functions of SnO concentrations. Nonlinear optical susceptibility (χ ) and nonlinear refractive index (n) rushed to 48.84 × 10 and 11.43 × 10 esu, respectively for 5 wt% SnO film, demonstrating strong potential for nonlinear devices. These results highlight PVA/SnO films as promising candidates for flexible optoelectronics application.
聚乙烯醇(PVA)因其独特的性能在柔性光电子领域备受关注。本研究通过溶液浇铸技术研究了掺入不同浓度(0、2、3、4和5 wt%)的氧化锡(SnO)纳米颗粒(NPs)对PVA薄膜结构、光学和介电性能的影响。X射线衍射(XRD)分析表明,随着SnO含量的增加,微晶尺寸增加了28%(从25.74纳米增加到32.88纳米),位错减少,表明结构有序性增强。扫描电子显微镜(SEM)证实,在≤3 wt%时纳米颗粒(NP)分布均匀,但在5 wt%时出现聚集。傅里叶变换红外光谱(FT-IR)和拉曼光谱证实了SnO与PVA羟基之间存在氢键。光学带隙能量从4.59 eV(纯PVA)系统地降低到4.18 eV(5 wt% SnO),证实了半导体行为增强。由于SnO-PVA交联,光致发光(PL)强度显著猝灭,在432 nm处出现了新的与SnO相关的发射峰。确定了色散和介电参数与SnO浓度的函数关系。对于5 wt% SnO薄膜,非线性光学极化率(χ)和非线性折射率(n)分别达到48.84×10和11.43×10 esu,表明其在非线性器件方面具有强大潜力。这些结果突出了PVA/SnO薄膜作为柔性光电子应用的有前途的候选材料。