Optical phonon confinement significantly lowers the hot electron energy loss rate in III-nitride (InN, GaN, and AlN) and GaAs nanoscale structures.

This investigation presents a detailed comparative analysis of the energy loss rate (ELR) in the III-nitride (InN, AlN, and GaN) and GaAs quantum well (QW) heterostructures of hot electrons because of confined and bulk optical phonon (OP) scattering based on the electronic temperature model. This analysis is conducted because of the impact of a quantizing magnetic field and utilizes the framework of OP confinement proposed by Huang and Zhu. The following results are what we have obtained: firstly, the explicit expression of the average ELR in the III-nitride (InN, AlN, and GaN) and GaAs QW heterostructures of hot electrons because of confined OP interaction. Secondly, the graphs describe the dependencies of the ELR in the InN, GaN, and AlN, and GaAs QW heterostructures of hot electrons on the quantizing magnetic field, two-dimensional electronic concentration, temperature of the two-dimensional electrons, and QW heterostructure width for both the aforementioned OP types. Thirdly, the comparative graphs of the above dependencies between the InN, AlN, and GaN, and GaAs material QW heterostructures in all three cases of OPs, including bulk, confinement, and both bulk and confinement are presented. Finally, the various contributions from individual phonon modes to the ELR in the III-nitride (InN, AlN, and GaN) and GaAs QW heterostructures of hot electrons are analyzed. Our research offers insightful knowledge that will support the development and manufacturing of optoelectronic devices.