Thi Phuong Thuy Huynh, Hien Nguyen Dinh
Thu Dau Mot University Ho Chi Minh City Vietnam
Institute of Research and Development, Duy Tan University Da Nang Vietnam
Nanoscale Adv. 2025 Sep 9. doi: 10.1039/d5na00483g.
This investigation presents a detailed comparative analysis of the energy loss rate (ELR) in the III-nitride (InN, AlN, and GaN) and GaAs quantum well (QW) heterostructures of hot electrons because of confined and bulk optical phonon (OP) scattering based on the electronic temperature model. This analysis is conducted because of the impact of a quantizing magnetic field and utilizes the framework of OP confinement proposed by Huang and Zhu. The following results are what we have obtained: firstly, the explicit expression of the average ELR in the III-nitride (InN, AlN, and GaN) and GaAs QW heterostructures of hot electrons because of confined OP interaction. Secondly, the graphs describe the dependencies of the ELR in the InN, GaN, and AlN, and GaAs QW heterostructures of hot electrons on the quantizing magnetic field, two-dimensional electronic concentration, temperature of the two-dimensional electrons, and QW heterostructure width for both the aforementioned OP types. Thirdly, the comparative graphs of the above dependencies between the InN, AlN, and GaN, and GaAs material QW heterostructures in all three cases of OPs, including bulk, confinement, and both bulk and confinement are presented. Finally, the various contributions from individual phonon modes to the ELR in the III-nitride (InN, AlN, and GaN) and GaAs QW heterostructures of hot electrons are analyzed. Our research offers insightful knowledge that will support the development and manufacturing of optoelectronic devices.
本研究基于电子温度模型，对III族氮化物（InN、AlN和GaN）以及GaAs量子阱（QW）异质结构中热电子因受限光学声子（OP）散射和体光学声子散射导致的能量损失率（ELR）进行了详细的对比分析。由于量子化磁场的影响，且利用了Huang和Zhu提出的OP限制框架进行了此项分析。我们得到了以下结果：首先，给出了III族氮化物（InN、AlN和GaN）以及GaAs量子阱异质结构中热电子因受限OP相互作用产生的平均ELR的显式表达式。其次，图表描述了InN、GaN、AlN以及GaAs量子阱异质结构中热电子的ELR对量子化磁场、二维电子浓度、二维电子温度以及量子阱异质结构宽度的依赖关系，涉及上述两种OP类型。第三，给出了在体光学声子、受限光学声子以及体和受限光学声子这三种情况下，InN、AlN、GaN以及GaAs材料量子阱异质结构上述依赖关系的对比图表。最后，分析了III族氮化物（InN、AlN和GaN）以及GaAs量子阱异质结构中热电子的ELR中各个声子模式的不同贡献。我们的研究提供了有见地的知识，将支持光电器件的开发和制造。
