Huang Yung-Jui, Zeng Guang-Yi, Hu Lei, Lee Kuei-Yi, Wang Huan-Chun, Lin Pao-Hung
Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan.
Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan.
Materials (Basel). 2025 Aug 28;18(17):4028. doi: 10.3390/ma18174028.
The integration of vertically aligned carbon nanotubes (CNTs) onto glass substrates is a critical step toward realizing transparent and microfabrication-compatible electronic devices. The direct synthesis of patterned vertically aligned multi-walled CNTs (MWCNTs) on glass substrates using chemical vapor deposition (CVD) is demonstrated. Photolithographic patterning was employed prior to CNT growth to define the spatial geometry of the vertically aligned MWCNTs, enabling precise control over the emitter layout. A key factor influencing CNT morphology was found to be the thickness of the Al buffer layer. Among the tested thicknesses, an aluminum (Al) buffer layer with a thickness of 5 nm yielded optimal results. This configuration facilitates the growth of highly aligned MWCNTs with an average length of approximately 7 μm and a number density of about 10 cm. The patterned MWCNTs exhibit excellent vertical alignment and well-defined hexagonal geometries consistent with photolithographic designs. Field emission measurements further validate the material quality, with patterned vertically aligned MWCNTs demonstrating uniform emission and good temporal stability. These results establish a practical and scalable approach for growing patterned vertically aligned MWCNTs directly on thermally stable glass substrates, offering a promising platform for transparent field emission technologies and CNT-based microsystems.
将垂直排列的碳纳米管(CNT)集成到玻璃基板上是实现透明且与微制造兼容的电子器件的关键一步。本文展示了使用化学气相沉积(CVD)在玻璃基板上直接合成图案化垂直排列的多壁碳纳米管(MWCNT)的方法。在碳纳米管生长之前采用光刻图案化来定义垂直排列的多壁碳纳米管的空间几何形状,从而能够精确控制发射极布局。发现影响碳纳米管形态的一个关键因素是铝缓冲层的厚度。在测试的厚度中,厚度为5nm 的铝(Al)缓冲层产生了最佳结果。这种配置有利于生长高度排列的多壁碳纳米管,其平均长度约为7μm,数密度约为10/cm。图案化的多壁碳纳米管表现出优异的垂直排列以及与光刻设计一致的明确六边形几何形状。场发射测量进一步验证了材料质量,图案化垂直排列的多壁碳纳米管表现出均匀发射和良好的时间稳定性。这些结果建立了一种在热稳定玻璃基板上直接生长图案化垂直排列的多壁碳纳米管的实用且可扩展的方法,为透明场发射技术和基于碳纳米管的微系统提供了一个有前景的平台。