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用于实现下一代应用的二维过渡金属二硫属化物的先进合成与独特性质

Advanced Synthesis and Unique Properties of 2D Transition Metal Dichalcogenides for Realizing Next-Generation Applications.

作者信息

Patra Chandan, Mondal Subrata, Mukherjee Rupam, Nandakishora Yerumbu

机构信息

Innovation and Translational Research Hub (iTRH), Presidency University, Bangaluru 560064, India.

Department of Physics, Presidency University, Bangaluru 560064, India.

出版信息

ACS Mater Au. 2025 Jun 26;5(5):745-766. doi: 10.1021/acsmaterialsau.5c00015. eCollection 2025 Sep 10.

DOI:10.1021/acsmaterialsau.5c00015
PMID:40949025
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12426788/
Abstract

Transition metal dichalcogenides (TMDs) have emerged as a prominent class of two-dimensional (2D) materials, offering a tunable bandgap that addresses the limitations of graphene's gapless nature. Their exceptional optical and electronic properties have positioned them at the forefront of both fundamental research and advanced device applications. This Review aims to provide a fundamental understanding of the vast family of 2D TMDs while highlighting recent progress in their synthesis techniques, unique properties, and multifunctional applications, particularly in the monolayer and near-monolayer regimes. A significant focus is placed on the challenges associated with emerging synthesis methods and the intriguing properties exhibited by monolayer TMDs, which enable their integration into next-generation photodetectors, optoelectronic devices, and sensors. These advancements enhance the flexibility and performance of monolayered materials, helping to overcome existing limitations.

摘要

过渡金属二硫属化物(TMDs)已成为一类重要的二维(2D)材料,具有可调节的带隙,解决了石墨烯无带隙特性的局限性。它们卓越的光学和电子特性使其处于基础研究和先进器件应用的前沿。本综述旨在对二维TMDs这一庞大的材料家族有一个基本的了解,同时突出其合成技术、独特性质和多功能应用方面的最新进展,特别是在单层和近单层状态下。重点关注与新兴合成方法相关的挑战以及单层TMDs所展现的引人入胜的性质,这些性质使其能够集成到下一代光电探测器、光电器件和传感器中。这些进展提高了单层材料的灵活性和性能,有助于克服现有局限性。

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