Ha Heebo, Kim Hongju, Lee Sumin, Choi Sooyong, Choi Chunghyeon, Yusoff Wan Yusmawati Wan, Shan Ali, Lim Sooman, Hwang Byungil
Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul 06974, Republic of Korea.
School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea.
Micromachines (Basel). 2025 Aug 22;16(9):968. doi: 10.3390/mi16090968.
Three-dimensional integrated circuit (3D IC) technology is an innovative approach in the semiconductor industry aimed at enhancing performance and reducing power consumption. However, thermal management issues arising from high-density stacking pose significant challenges. Carbon nanotubes (CNTs) have gained attention as a promising material for addressing the thermal management problems of through-silicon vias (TSVs) owing to their unique properties, such as high thermal conductivity, electrical conductivity, excellent mechanical strength, and low coefficient of thermal expansion (CTE). This paper reviews various applications and the latest research results on CNT-based TSVs. Furthermore, it proposes a novel TSV design using CNT-copper-tin composites to optimize the performance and assess the feasibility of CNT-based TSVs.
三维集成电路（3D IC）技术是半导体行业中一种旨在提高性能和降低功耗的创新方法。然而，高密度堆叠引发的热管理问题带来了重大挑战。碳纳米管（CNT）因其独特的性能，如高导热性、导电性、优异的机械强度和低热膨胀系数（CTE），作为解决硅通孔（TSV）热管理问题的一种有前途的材料而受到关注。本文综述了基于碳纳米管的硅通孔的各种应用和最新研究成果。此外，还提出了一种使用碳纳米管-铜-锡复合材料的新型硅通孔设计，以优化性能并评估基于碳纳米管的硅通孔的可行性。
