硅二极管中子探测器的光子和电子响应。

Photon and electron response of silicon-diode neutron detectors.

作者信息

McCall R C, Jenkins T M, Oliver G D

出版信息

Med Phys. 1978 Jan-Feb;5(1):37-41. doi: 10.1118/1.594403.

Abstract

The photon response of silicon-diode neutron detectors is analyzed theoretically and measured in the 15-25-MeV region. The main mechanism for producing a response in the diode is shown to be the displacement of silicon atoms by scattering of electrons. If the photon source is an electron accelerator target, the response is mostly due to electrons originating in the target with a smaller contribution from electrons produced in the diode by photons generated at small angles to the beam.

摘要

对硅二极管中子探测器的光子响应进行了理论分析，并在15 - 25兆电子伏特区域进行了测量。结果表明，二极管产生响应的主要机制是电子散射导致硅原子位移。如果光子源是电子加速器靶，响应主要源于靶中的电子，而二极管中由与束流小角度产生的光子所产生的电子贡献较小。