Ibe S N, Sinskey A J, Botstein D
J Bacteriol. 1982 Oct;152(1):260-8. doi: 10.1128/jb.152.1.260-268.1982.
The genes involved in the high radiation resistance of mutant R68 of Salmonella typhimurium LT2 were mapped by conjugation. It was observed that the high radiation resistance involved genes localized in two regions of the chromosome, which have been designated as garA and garB for high gamma resistance. The garA gene mapped near gal and uvrB at about 18 map units, and the garB gene mapped near purC at about 49 map units. The resistance of R68 was reduced to the wild-type level by the acquisition of the two wild-type alleles, garA+ and garB+. Recombinants carrying the garA or garB gene repaired single-strand breaks in their DNA faster than did the wild-type strain. However, only those with the garA mutation showed a marked increase in UV irradiation resistance above the wild-type level, whereas those with garB mutation exhibited an increased rate of spontaneous degradation of DNA beyond the level observed in recA cells.
通过接合作用对鼠伤寒沙门氏菌LT2突变体R68的高辐射抗性相关基因进行了定位。观察到高辐射抗性涉及位于染色体两个区域的基因,这两个区域因对高γ辐射抗性而被命名为garA和garB。garA基因定位在gal和uvrB附近,约为18个图距单位,garB基因定位在purC附近,约为49个图距单位。通过获得两个野生型等位基因garA +和garB +,R68的抗性降低到野生型水平。携带garA或garB基因的重组体修复其DNA中单链断裂的速度比野生型菌株更快。然而,只有那些具有garA突变的重组体在紫外线照射抗性方面比野生型水平有显著提高,而那些具有garB突变的重组体表现出DNA自发降解速率增加,超过了recA细胞中观察到的水平。