Gray D, Dullforce P, Jainandunsing S
Department of Immunology, Royal Postgraduate Medical School, Hammersmith Hospital, London, UK.
J Exp Med. 1994 Jul 1;180(1):141-55. doi: 10.1084/jem.180.1.141.
To study the role of the CD40-CD40 ligand interaction in the development of memory B cells and its level of action during primary antibody responses in vivo, mice were injected with a soluble CD40 fusion protein (sCD40-gamma 1), so as to block the interaction. The effects of the treatment on the primary antibody response were reminiscent of hyper-immunoglobulin M (IgM) syndrome (HIMG1): antigen-specific IgG responses were grossly inhibited whereas the IgM response was augmented severalfold. The latter observation suggests that there is a T-dependent, CD40 ligand-independent pathway of B cell activation that leads to IgM responses and that a significant component of the IgM in HIMG1 patients is derived from T-dependent responses. The secondary response was not readily blocked by sCD40-gamma 1 treatment, indicating a relative independence of CD40 ligation of antigen-experienced B cells. The most striking finding from these studies is that the development of memory B cell populations (measured by adoptive transfer) is grossly impaired by administration of sCD40-gamma 1 during the early induction phase of the response. It is surprising that although the generation memory is diminished, there is no quantitative difference in the development of germinal centers. Whereas entry of B cells into the memory cell pathway is dependent on CD40 ligation, the clonal expansion of the potential memory precursors in germinal centers seems not to require a CD40 signal.
为了研究CD40-CD40配体相互作用在记忆B细胞发育中的作用及其在体内初次抗体应答过程中的作用水平,给小鼠注射可溶性CD40融合蛋白(sCD40-γ1)以阻断这种相互作用。该处理对初次抗体应答的影响类似于高免疫球蛋白M(IgM)综合征(HIMG1):抗原特异性IgG应答受到严重抑制,而IgM应答增强了几倍。后一观察结果表明,存在一条不依赖CD40配体的T细胞依赖性B细胞活化途径,可导致IgM应答,并且HIMG1患者中IgM的重要组成部分源自T细胞依赖性应答。sCD40-γ1处理不易阻断二次应答,表明抗原致敏的B细胞的CD40连接具有相对独立性。这些研究中最引人注目的发现是,在应答的早期诱导阶段给予sCD40-γ1会严重损害记忆B细胞群体的发育(通过过继转移测量)。令人惊讶的是,尽管记忆的产生减少了,但生发中心的发育在数量上没有差异。虽然B细胞进入记忆细胞途径依赖于CD40连接,但生发中心中潜在记忆前体的克隆扩增似乎不需要CD40信号。