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原始抗原罪的分子分析。I. 记忆B细胞应答过程中的克隆选择、体细胞突变和同种型转换。

Molecular analysis of original antigenic sin. I. Clonal selection, somatic mutation, and isotype switching during a memory B cell response.

作者信息

Fish S, Zenowich E, Fleming M, Manser T

机构信息

Department of Biology, Princeton University, New Jersey 08544.

出版信息

J Exp Med. 1989 Oct 1;170(4):1191-209. doi: 10.1084/jem.170.4.1191.

Abstract

To determine how the memory B cell population elicited to one epitope might be used in immune responses to other, structurally related epitopes, we explored the phenomenon of original antigenic sin. Strain A/J mice reproducibly respond to immunization with p-azophenylarsonate (Ars) by production of anti-Ars antibodies encoded predominantly by a single VH gene segment (VHIdCR). The structural analogue of Ars p-azophenylsulfonate (Sulf) fails alone to elicit such V regions, but can do so in A/J mice previously immunized with Ars, providing a means to specifically examine B cells capable of responding secondarily to a crossreactive antigen (i.e., memory cells). VHIdCR-expressing hybridomas were derived from the Ars-primed, Sulf-boosted original antigenic sin response of A/J mice at various times after Ars priming, and the properties of the antibodies they express and the structure of the genes encoding these antibodies were characterized. The data obtained support the following conclusions: (a) The Ars-induced memory B cell population capable of being crossreactively stimulated by Sulf is largely formed from a small fraction of all B cells participating in the anti-Ars primary response that express somatically mutated V regions; (b) the antibody repertoire and clonal composition of this population are stable over long periods of time; (c) memory B cells are capable of clonal expansion in the absence of a high rate of V gene somatic mutation; (d) the activation requirements for clonal selection of memory, versus naive B cells appear to differ; and (e) a major fraction of Ars-induced memory B cells express either IgM or IgG3 prior to and during the initial stages of the sin response.

摘要

为了确定针对一个表位引发的记忆B细胞群体如何用于对其他结构相关表位的免疫反应,我们探究了原始抗原罪现象。A/J品系小鼠对用对氨基苯胂酸(Ars)免疫可重复性地产生主要由单个VH基因片段(VHIdCR)编码的抗Ars抗体。Ars的结构类似物对氨基苯磺酸酯(Sulf)单独不能引发此类V区,但在先前用Ars免疫的A/J小鼠中可以引发,这提供了一种特异性检测能够对交叉反应抗原产生二次反应的B细胞(即记忆细胞)的方法。表达VHIdCR的杂交瘤源自A/J小鼠在Ars免疫后的不同时间经Ars致敏、Sulf加强的原始抗原罪反应,并且对它们所表达抗体的特性以及编码这些抗体的基因结构进行了表征。获得的数据支持以下结论:(a)能够被Sulf交叉反应刺激的Ars诱导的记忆B细胞群体很大程度上由参与抗Ars初次反应的所有B细胞中的一小部分形成,这些B细胞表达体细胞突变的V区;(b)该群体的抗体库和克隆组成在很长一段时间内是稳定的;(c)记忆B细胞在没有高频率V基因体细胞突变的情况下能够进行克隆扩增;(d)记忆B细胞与幼稚B细胞的克隆选择的激活要求似乎不同;(e)在罪反应的初始阶段之前和期间,很大一部分Ars诱导的记忆B细胞表达IgM或IgG3。

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