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内向整流电流和低阈值钙电流参与大鼠视交叉上核神经元的自发放电机制。

Inward rectifier and low-threshold calcium currents contribute to the spontaneous firing mechanism in neurons of the rat suprachiasmatic nucleus.

作者信息

Akasu T, Shoji S, Hasuo H

机构信息

Department of Physiology, Kurume University School of Medicine, Japan.

出版信息

Pflugers Arch. 1993 Oct;425(1-2):109-16. doi: 10.1007/BF00374510.

DOI:10.1007/BF00374510
PMID:7903809
Abstract

Intracellular and voltage-clamp studies were carried out to clarify the mechanism for spontaneous firing activity in neurons of the suprachiasmatic nucleus (SCN) of rat hypothalamic brain slices in vitro. SCN neurons displayed spontaneously firing action potentials that were preceded by a depolarizing pre-potential and followed by a short spike after-hyperpolarization (AHP). Injection of inward current with a duration longer than 50 ms resulted in a depolarizing voltage "sag" on hyperpolarizing electrotonic potentials. The inward rectification was depressed by bath application of caesium (1 mM) but not by barium (500 microM). SCN neurons also showed a rebound depolarization associated with spike discharge (anodal break) in response to relaxation of hyper polarizing current injection. The rebound depolarization was reduced by nominally zero calcium. Cadmium (500 microM), cobalt (1 mM) or caesium (1 mM) but not nicardipine also depressed the rebound depolarization. Under voltage-clamp conditions, hyperpolarizing steps to membrane potentials negative to approximately -60 mV caused an inward rectifier current, probably H current (IH), which showed no inactivation with time. Bath application of caesium (1-2 mM) suppressed IH. Caesium (2 mM) depressed the slope of the depolarizing spike pre-potential, resulting in a prolongation of the interspike interval of tonic firing neurons. We conclude that both the inward rectifier current, IH, and the low-threshold calcium current contribute to the spike prepotential of spontaneous action potentials in firing neurons of the rat SCN.

摘要

为阐明体外培养的大鼠下丘脑脑片视交叉上核(SCN)神经元自发放电活动的机制,进行了细胞内和电压钳研究。SCN神经元表现出自发放电动作电位,其之前有一个去极化预电位,之后有一个短暂的锋电位后超极化(AHP)。注入持续时间超过50毫秒的内向电流会导致超极化电紧张电位上出现去极化电压“凹陷”。内向整流在浴槽中加入铯(1毫摩尔)时受到抑制,但加入钡(500微摩尔)时不受影响。SCN神经元在超极化电流注入松弛时还表现出与锋电位发放相关的反弹去极化(阳极断裂)。名义上零钙会降低反弹去极化。镉(500微摩尔)、钴(1毫摩尔)或铯(1毫摩尔)而非尼卡地平也会抑制反弹去极化。在电压钳条件下,向膜电位负于约-60毫伏的方向进行超极化步骤会引起内向整流电流,可能是H电流(IH),其不随时间失活。浴槽中加入铯(1-2毫摩尔)会抑制IH。铯(2毫摩尔)会降低去极化锋电位预电位的斜率,导致紧张性发放神经元的峰间间隔延长。我们得出结论,内向整流电流IH和低阈值钙电流都有助于大鼠SCN发放神经元自发放电动作电位的锋电位预电位。

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