Liu J B, Tracy B M, Gronsky R
Materials Technology Department, Intel Corporation, Santa Clara, California 95052.
Microsc Res Tech. 1993 Oct 1;26(2):162-6. doi: 10.1002/jemt.1070260209.
A selected area mechanical polishing technique has been developed to improve the precision of cross-sectional TEM sample preparation, based upon the early work of Benedict and colleagues [Benedict et al. (1990) MRS Symp. Proc. Vol. 199, p. 189]. TEM samples were made from a pre-selected section through the middle of a 1 micron wide band of transistors extending laterally for more than 1 mm by precise control over the plane of polish with a corresponding reduction in sample preparation time. To illustrate the application of this technique, a uniformly thin, electron transparent TEM sample of a single, specific, failed transistor is obtained from a 4 mm by 10 mm device array.
