Isshiki T, Nishio K, Saijo H, Shiojiri M, Yabuuchi Y, Takahashi N
Kyoto Institute of Technology, Japan.
Microsc Res Tech. 1993 Jul 1;25(4):325-34. doi: 10.1002/jemt.1070250409.
Natural (molybdenite) and synthesized molybdenum disulfide crystals have been studied by high-resolution transmission electron microscopy. The image simulation demonstrates that the [0001] and [0110] HRTEM images of hexagonal and rhombohedral MoS2 crystals hardly disclose their stacking sequences, and that the [2110] images can distinguish the Mo and S columns along the incident electron beam and enable one to determine not only the crystal structure but also the fault structure. Observed [0001] images of cleaved molybdenite and synthesized MoS2 crystals, however, reveal the strain field around partial dislocations limiting an extended dislocation. A cross-sectional image of a single molecular (S-Mo-S) layer cleaved from molybdenite has been observed. Synthesized MoS2 flakes which were prepared by grinding have been found to be rhombohedral crystals containing many stacking faults caused by glides between S/S layers.
已通过高分辨率透射电子显微镜对天然（辉钼矿）和合成二硫化钼晶体进行了研究。图像模拟表明，六方和菱面体MoS₂晶体的[0001]和[0110]高分辨率透射电子显微镜图像几乎无法揭示其堆积序列，而[2110]图像可以区分沿入射电子束方向的Mo和S柱，不仅能够确定晶体结构，还能确定位错结构。然而，观察到的解理辉钼矿和合成MoS₂晶体的[0001]图像揭示了限制扩展位错的部分位错周围的应变场。已观察到从辉钼矿解理出的单个分子（S-Mo-S）层的横截面图像。通过研磨制备的合成MoS₂薄片被发现是菱面体晶体，含有许多由S/S层之间的滑移引起的堆积位错。
