Daniels S B, Chovnick A
Department of Molecular and Cell Biology, University of Connecticut, Storrs 06269.
Genetics. 1993 Mar;133(3):623-36. doi: 10.1093/genetics/133.3.623.
The gap-repair model proposes that P elements move via a conservative, "cut-and-paste" mechanism followed by double-strand gap repair, using either the sister chromatid or homolog as the repair template. We have tested this model by examining meiotic perturbations of an X-linked ry+ transposon during the meiotic cycle of males, employing the mei-S332 mutation, which induces high frequency equational nondisjunction. This system permits the capture of both sister-X chromatids in a single patroclinous daughter. In the presence of P-transposase, transpositions within the immediate proximity of the original site are quite frequent. These are readily detectable among the patroclinous daughters, thereby allowing the combined analysis of the transposed element, the donor site and the putative sister-strand template. Molecular analysis of 22 meiotic transposition events provide results that support the gap-repair model of P element transposition. Prior to this investigation, it was not known whether transposition events were exclusively or predominantly premeiotic. The results of our genetic analysis revealed that P elements mobilize at relatively high frequencies during meiosis. We estimated that approximately 4% of the dysgenic male gametes have transposon perturbations of meiotic origin; the proportion of gametes containing lesions of premeiotic origin was estimated at 32%.
缺口修复模型提出,P 元件通过一种保守的“剪切粘贴”机制移动,随后进行双链缺口修复,使用姐妹染色单体或同源染色体作为修复模板。我们通过在雄性减数分裂周期中检查 X 连锁的 ry+转座子的减数分裂扰动来测试该模型,采用 mei-S332 突变,该突变会诱导高频均等不分离。这个系统允许在单个偏父性后代中捕获两条姐妹 X 染色单体。在存在 P 转座酶的情况下,原始位点紧邻区域内的转座相当频繁。这些在偏父性后代中很容易检测到,从而允许对转座元件、供体位点和假定的姐妹链模板进行综合分析。对 22 个减数分裂转座事件的分子分析提供了支持 P 元件转座缺口修复模型的结果。在这项研究之前,尚不清楚转座事件是完全还是主要发生在减数分裂前。我们的遗传分析结果表明,P 元件在减数分裂期间以相对较高的频率移动。我们估计,大约 4%的不育雄配子具有减数分裂起源的转座子扰动;含有减数分裂前起源损伤的配子比例估计为 32%。