Schneider U, Niedermeier W, Grafe P
Department of Physiology, University of Munich, Germany.
Diabetes. 1993 Jul;42(7):981-7. doi: 10.2337/diab.42.7.981.
Isolated ventral and dorsal rat spinal roots incubated in normal (2.5 mM) or high glucose (25 mM) concentrations or in high concentrations of other hexoses were exposed transiently to hypoxia (30 min) in a solution of low buffering power. Compound nerve action potentials, extracellular direct current potentials, and interstitial pH were continuously recorded before, during, and after hypoxia. Ventral roots incubated in 25 mM D-glucose showed resistance to hypoxia. Dorsal roots, on the other hand, revealed electrophysiological damage by hyperglycemic hypoxia as indicated by a lack of posthypoxic recovery. In both types of spinal roots, interstitial acidification was most pronounced during hyperglycemic hypoxia. The changes in the sensitivity to hypoxia induced by high concentrations of D-glucose were imitated by high concentrations of D-mannose. In contrast, D-galactose, L-glucose, D-fructose, and L-fucose did not have such effects. Resistance to hypoxia, hypoxia-generated interstitial acidification, and hypoxia-induced electrophysiological damage were absent after pharmacological inhibition of nerve glycolysis with iodoacetate. These observations indicate 1) that enhanced anaerobic glycolysis produces resistance to hypoxia in hyperglycemic peripheral nerves and 2) that acidification may impair the function of peripheral axons when anaerobic glycolysis proceeds in a tissue with reduced buffering power.
将分离出的大鼠腹侧和背侧脊髓神经根置于正常(2.5 mM)或高糖(25 mM)浓度的环境中,或置于高浓度的其他己糖环境中,然后在低缓冲能力的溶液中短暂暴露于缺氧环境(30分钟)。在缺氧前、缺氧期间和缺氧后持续记录复合神经动作电位、细胞外直流电位和间质pH值。在25 mM D-葡萄糖中孵育的腹侧神经根对缺氧具有抗性。另一方面,背侧神经根显示出高血糖性缺氧导致的电生理损伤,表现为缺氧后恢复缺失。在两种类型的脊髓神经根中,高血糖性缺氧期间间质酸化最为明显。高浓度的D-甘露糖模拟了高浓度D-葡萄糖诱导的对缺氧敏感性的变化。相比之下,D-半乳糖、L-葡萄糖、D-果糖和L-岩藻糖没有这种作用。用碘乙酸对神经糖酵解进行药理学抑制后,对缺氧的抗性、缺氧产生的间质酸化以及缺氧诱导的电生理损伤均消失。这些观察结果表明:1)增强的无氧糖酵解在高血糖的外周神经中产生对缺氧的抗性;2)当无氧糖酵解在缓冲能力降低的组织中进行时,酸化可能损害外周轴突的功能。