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用半导体涂覆心血管支架以改善其血液相容性。

Coating of cardiovascular stents with a semiconductor to improve their hemocompatibility.

作者信息

Bolz A, Amon M, Ozbek C, Heublein B, Schaldach M

机构信息

Department of Biomedical Engineering, Friedrich-Alexander University, Erlangen-Nürnberg, Germany.

出版信息

Tex Heart Inst J. 1996;23(2):162-6.

Abstract

Thrombogenesis on artificial surfaces can be described as an electron transfer reaction. To inhibit this oxidation process and thereby achieve high hemocompatibility, a surface requires semiconducting properties. However, because all known solid semiconductors are extremely brittle, the requirements for high hemocompatibility and mechanical stability cannot be met by any single material. Therefore, a hybrid design is introduced as a new approach to improve the hemocompatibility of cardiovascular stents.

摘要

人工表面上的血栓形成可被描述为一种电子转移反应。为抑制这种氧化过程并从而实现高血液相容性,表面需要具备半导体特性。然而,由于所有已知的固体半导体都极其易碎,任何单一材料都无法满足高血液相容性和机械稳定性的要求。因此,引入一种混合设计作为提高心血管支架血液相容性的新方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ccfa/325330/b76cb7d5d995/thij00029-0095-a.jpg

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