Morales AM, Lieber CM
A. M. Morales, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA. C. M. Lieber, Department of Chemistry and Chemical Biology, and Division of Engineering and Applied Sciences, Harvard University, Cambridg.
Science. 1998 Jan 9;279(5348):208-11. doi: 10.1126/science.279.5348.208.
A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowires with diameters of 6 to 20 and 3 to 9 nanometers, respectively, and lengths ranging from 1 to 30 micrometers. Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
一种结合激光烧蚀团簇形成和汽-液-固（VLS）生长的方法被开发用于合成半导体纳米线。在此过程中，激光烧蚀用于制备纳米直径的催化剂团簇，这些团簇决定了通过VLS生长产生的线的尺寸。该方法用于分别制备大量直径为6至20纳米和3至9纳米、长度范围为1至30微米的均匀单晶硅和锗纳米线。在不同条件和催化剂材料下进行的研究证实了生长机制的核心细节，并表明成熟的相图可用于合理预测制备纳米线的催化剂材料和生长条件。
