Chen L J, Lin J H, Lee T L, Luo C H, Hsieh W Y, Liang J M, Wang M H
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China.
Microsc Res Tech. 1998 Jan 15;40(2):136-51. doi: 10.1002/(SICI)1097-0029(19980115)40:2<136::AID-JEMT5>3.0.CO;2-T.
High-resolution electron microscopy of amorphous interlayers (a-interlayer) formed by solid-state diffusion between metal thin films and silicon is reviewed. In this paper, an overview of the development is presented. Pertinent data obtained on the growth kinetics and structure of a-interlayers in polycrystalline metal thin films on single-crystal silicon are reported. For the Ti/Si, Zr/Si, Hf/Si, V/Si, Nb/Si and Ta/Si systems, the growth of a-interlayer was found to follow a linear law in the initial stage. Si atoms were found to be the dominant diffusing species in the solid phase amorphization in the Ti/Si, Zr/Si, and Hf/Si systems. For the Y/Si system, the stability of amorphous interlayer depends critically on the composition of the amorphous films. Auto-correlation function analysis was utilized to determine the structure of the amorphous interlayers. HRTEM in conjunction with the fast Fourier transform were applied to determine the first nucleated crystalline phase. Simultaneous presence of multiphases was observed to occur in a number of refractory metal/Si systems.
综述了通过金属薄膜与硅之间的固态扩散形成的非晶中间层（a-中间层）的高分辨率电子显微镜研究。本文介绍了该研究领域的发展概况。报告了在单晶硅上的多晶金属薄膜中a-中间层的生长动力学和结构方面获得的相关数据。对于Ti/Si、Zr/Si、Hf/Si、V/Si、Nb/Si和Ta/Si体系，发现a-中间层在初始阶段的生长遵循线性规律。在Ti/Si、Zr/Si和Hf/Si体系的固相非晶化过程中，发现Si原子是主要的扩散物种。对于Y/Si体系，非晶中间层的稳定性关键取决于非晶薄膜的组成。利用自相关函数分析来确定非晶中间层的结构。结合快速傅里叶变换的高分辨率透射电子显微镜被用于确定第一个成核的晶相。在许多难熔金属/Si体系中观察到多相同时存在。
