Aleshkin G I, Kadzhaev K V, Markov A P
The Gamaleya Research Institute for Epidemiology and Microbiology of the Russian Academy of Medical Science, Gamaleya St. 18, 123098 Moscow, Russian Federation.
Mutat Res. 1998 Jun 5;401(1-2):179-91. doi: 10.1016/s0027-5107(98)00007-4.
UV-inducible precise excision of transposons is a specific SOS-mutagenesis process. It deals with the deletion formation which has previously been demonstrated to involve direct or inverted IS-sequences of transposons. The process was used for revisiting the targeted and untargeted SOS-mutability and its relationship to the key genes for SOS-mutagenesis: the recA, lexA and umuDC. The precise excision of transposons Tn5 and Tn10 from the chromosomal insertion sites ade128 and cyc750 is induced in Escherichia coli K-12 and B cells, wild-type for DNA-repair, both by the low doses of UV-light ranging from 0.25 J m-2 to 2.5 J m-2 and the high doses within the range 5.0-40.0 J m-2. Precise excision of these transposons induced by the range of low doses incapable to induce targeted point mutations reveals its mostly untargeted nature. This process for the transposon Tn1 is not induced by UV-light within the range of doses 0.25-2.5 J m-2 while its induction is possible by UV-fluences ranging from 5.0 to 40.0 J m-2. A dose-response of the precise excision of Tn1 is similar to that of the UV-induced reversion of trpUAA point mutation that is targeted by nature and contrasts to the UV-inducible precise excision of Tn5 and Tn10. Both types of UV-inducible precise excision, demonstrated either by Tn1 or Tn5 and Tn10, are eliminated by mutations in the lexA, recA and umuDC genes indispensable for UV-induced SOS-mutability. The palindromic structures different for the transposons Tn1, Tn5 and Tn10 are discussed to be involved and affect the targeted and untargeted precise excision of transposons induced by UV-light.
转座子的紫外线诱导精确切除是一种特定的SOS诱变过程。它涉及缺失形成,此前已证明该过程涉及转座子的直接或反向IS序列。该过程用于重新审视靶向和非靶向SOS突变性及其与SOS诱变关键基因recA、lexA和umuDC的关系。在DNA修复野生型的大肠杆菌K-12和B细胞中,低剂量紫外线(范围为0.25 J m-2至2.5 J m-2)和高剂量紫外线(范围为5.0 - 40.0 J m-2)均可诱导转座子Tn5和Tn10从染色体插入位点ade128和cyc750精确切除。低剂量范围内无法诱导靶向点突变的紫外线诱导这些转座子精确切除,揭示了其主要是非靶向性质。转座子Tn1在0.25 - 2.5 J m-2剂量范围内不会被紫外线诱导,而在5.0至40.0 J m-2的紫外线照射下可能被诱导。Tn1精确切除的剂量反应与天然靶向的trpUAA点突变的紫外线诱导回复相似,与Tn5和Tn10的紫外线诱导精确切除形成对比。Tn1或Tn5和Tn10所展示的两种类型的紫外线诱导精确切除,均可被紫外线诱导SOS突变性所必需的lexA、recA和umuDC基因突变消除。讨论了转座子Tn1、Tn5和Tn10不同的回文结构参与并影响紫外线诱导的转座子靶向和非靶向精确切除。