• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100).

作者信息

Resh J, Jamison KD, Strozier J, Bensaoula A, Ignatiev A

出版信息

Phys Rev B Condens Matter. 1989 Dec 15;40(17):11799-11803. doi: 10.1103/physrevb.40.11799.

DOI:10.1103/physrevb.40.11799
PMID:9991786
Abstract
摘要

相似文献

1
Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100).砷化镓(100)分子束外延生长过程中反射高能电子衍射强度振荡的阶段。
Phys Rev B Condens Matter. 1989 Dec 15;40(17):11799-11803. doi: 10.1103/physrevb.40.11799.
2
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.通过金辅助分子束外延法形成砷化镓纳米线的温度条件。
Nanotechnology. 2006 Aug 28;17(16):4025-30. doi: 10.1088/0957-4484/17/16/005. Epub 2006 Jul 14.
3
Real time observation of reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas-source molecular-beam-epitaxy growth of Si and SiGe on Si(001).
Phys Rev Lett. 1995 Apr 17;74(16):3213-3216. doi: 10.1103/PhysRevLett.74.3213.
4
Investigation of CuGaSe/CuInSe double heterojunction interfaces grown by molecular beam epitaxy.通过分子束外延生长的CuGaSe/CuInSe双异质结界面的研究。
AIP Adv. 2015 Feb 11;5(2):027120. doi: 10.1063/1.4908229. eCollection 2015 Feb.
5
Mechanism of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy on a Si(001) surface.硅(001)表面分子束外延过程中反射高能电子衍射强度振荡的机制
Phys Rev B Condens Matter. 1995 Oct 15;52(15):10748-10751. doi: 10.1103/physrevb.52.10748.
6
Origin of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy: A computational modeling approach.分子束外延过程中反射高能电子衍射强度振荡的起源:一种计算建模方法。
Phys Rev Lett. 1987 May 25;58(21):2235-2238. doi: 10.1103/PhysRevLett.58.2235.
7
Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular-beam epitaxy.通过分子束外延在 GaAs(001) 上生长的亚单层硅覆盖层的反射率各向异性光谱和反射高能电子衍射
Phys Rev B Condens Matter. 1995 Feb 15;51(7):4691-4694. doi: 10.1103/physrevb.51.4691.
8
Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy.GaAs(100) 衬底原位退火对随后通过分子束外延生长 InAs 量子点的影响。
Nanotechnology. 2010 Apr 2;21(13):134012. doi: 10.1088/0957-4484/21/13/134012. Epub 2010 Mar 8.
9
Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation.通过电子束蒸发在 GaAs(100) 衬底上制备的外延 Fe3Si 薄膜。
Nanotechnology. 2009 Jun 10;20(23):235604. doi: 10.1088/0957-4484/20/23/235604. Epub 2009 May 19.
10
Theoretical analysis of reflection high-energy electron diffraction (RHEED) and reflection high-energy positron diffraction (RHEPD) intensity oscillations expected for the perfect layer-by-layer growth.
Acta Crystallogr A Found Adv. 2015 Sep;71(Pt 5):513-8. doi: 10.1107/S2053273315010608. Epub 2015 Jul 9.