Yoo K H, Ha D H, Lee J O, Park J W, Kim J, Kim J J, Lee H Y, Kawai T, Choi H Y
Electronic Devices Group, Korea Research Institute of Standards and Science, Yusung, P.O. Box 102, Taejon 305-600, Korea.
Phys Rev Lett. 2001 Nov 5;87(19):198102. doi: 10.1103/PhysRevLett.87.198102. Epub 2001 Oct 23.
We report direct measurements of electrical transport through poly(dA)-poly(dT) and poly(dG)-poly(dC) DNA molecules containing identical base pairs. The observed experimental results suggest that electrical transport through DNA molecules occurs by polaron hopping. We have also investigated the effect of gate voltage on the current-voltage curve. It demonstrates the possibility of a DNA field-effect transistor operating at room temperature. Moreover, the gate-voltage dependent transport measurements show that poly(dA)-poly(dT) behaves as an n-type semiconductor, whereas poly(dG)-poly(dC) behaves as a p-type semiconductor.
我们报告了对通过含有相同碱基对的聚(dA)-聚(dT)和聚(dG)-聚(dC)DNA分子的电输运的直接测量。观察到的实验结果表明,通过DNA分子的电输运是通过极化子跳跃发生的。我们还研究了栅极电压对电流-电压曲线的影响。这证明了DNA场效应晶体管在室温下工作的可能性。此外,与栅极电压相关的输运测量表明,聚(dA)-聚(dT)表现为n型半导体,而聚(dG)-聚(dC)表现为p型半导体。