氧化镓管、纳米线和纳米画笔的直接合成。

Direct synthesis of gallium oxide tubes, nanowires, and nanopaintbrushes.

作者信息

Sharma Shashank, Sunkara Mahendra K

机构信息

Department of Chemical Engineering, University of Louisville, Louisville, Kentucky 40292, USA.

出版信息

J Am Chem Soc. 2002 Oct 16;124(41):12288-93. doi: 10.1021/ja027086b.

DOI:10.1021/ja027086b

PMID:12371872

Abstract

We demonstrate bulk synthesis of highly crystalline beta-gallium oxide tubes, nanowires, and nanopaintbrushes using molten gallium and microwave plasma containing a mixture of monatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of micrometers long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures could easily occur directly out of molten gallium exposed to an appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures should be of particular interest for optoelectronic devices and catalytic applications.

摘要

我们展示了使用熔融镓和包含单原子氧与氢混合物的微波等离子体大量合成高结晶度的β-氧化镓管、纳米线和纳米画笔。氧化镓纳米线的厚度为20-100纳米，长度为几十到几百微米。透射电子显微镜（TEM）显示纳米线具有高结晶度且没有任何结构缺陷。结果表明，暴露于气相中适当氢氧组成的熔融镓可直接轻易地发生氧化镓纳米结构的多次成核和生长。这些氧化镓纳米结构对于光电器件和催化应用应具有特别的吸引力。