Nomura Kenji, Ohta Hiromichi, Ueda Kazushige, Kamiya Toshio, Hirano Masahiro, Hosono Hideo
Hosono Transparent ElectroActive Materials, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan.
Science. 2003 May 23;300(5623):1269-72. doi: 10.1126/science.1083212.
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.
我们报道了使用单晶薄膜透明氧化物半导体InGaO3(ZnO)5作为电子通道以及非晶氧化铪作为栅极绝缘体来制造透明场效应晶体管。该器件在室温下表现出约106的开/关电流比和约80平方厘米每伏每秒的场效应迁移率，其操作对可见光照射不敏感。这一结果为实现下一代光电子学的透明电子学迈出了一步。
