Guo Liang, Wang Qing, Wang Chao, Chu Xuefeng, Hao Yunpeng, Chi Yaodan, Yang Xiaotian
Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China.
Department of Basic Science, Jilin Jianzhu University, Changchun 130118, China.
Micromachines (Basel). 2024 Nov 29;15(12):1445. doi: 10.3390/mi15121445.
The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental results show that the surface of GZTO films is smooth, which is favorable for stability. The off-state current is reduced by a factor of 10, the switching ratio is increased to 1.59 × 10, and the threshold voltage shift is reduced in PBS and NBS tests. In addition, the transmittance of all devices is greater than 80% in the visible range, and the optical bandgap of the TFTs is increased from 3.61 eV to 3.84 eV after Ga doping. The current enhancement of the GZTO TFTs is more pronounced under UV irradiation, with higher responsiveness and better-sustained photoconductivity. It is proved that Ga doped into ZTO as a carrier suppressor can better combine with oxygen vacancies and reduce the concentration of oxygen vacancies and oxygen defects compared with Zn and Sn atoms, thus improving stability. GaO, as a wide bandgap material, can improve the optical bandgap of GZTO TFTs so that they can better absorb the light in the UV wavelength band, and they can be used in the field of UV photodetection.
研究了不同Ga掺杂浓度的GZTO薄膜晶体管的电学、稳定性和光电性能。通过以不同溅射功率共溅射GaO和ZTO靶材制备有源层。实验结果表明，GZTO薄膜表面光滑，有利于稳定性。在PBS和NBS测试中，关态电流降低了10倍，开关比提高到1.59×10，阈值电压漂移减小。此外，所有器件在可见光范围内的透过率均大于80%，Ga掺杂后薄膜晶体管的光学带隙从3.61 eV增加到3.84 eV。GZTO薄膜晶体管在紫外光照射下电流增强更明显，具有更高的响应度和更好的持续光电导性。结果证明，作为载流子抑制器掺杂到ZTO中的Ga与氧空位结合能力更强，与Zn和Sn原子相比，能降低氧空位和氧缺陷的浓度，从而提高稳定性。GaO作为宽带隙材料，可以提高GZTO薄膜晶体管的光学带隙使其能更好地吸收紫外波段的光，可用于紫外光探测领域。
