在注入锰的氮化镓中形成的纳米级磁区。

Nanoscale magnetic regions formed in GaN implanted with Mn.

作者信息

Theodoropoulou N, Lee K P, Overberg M E, Chu S N, Hebard A F, Abernathy C R, Pearton S J, Wilson R G

机构信息

Department of Physics, University of Florida, Gainesville, Florida 32611, USA.

出版信息

J Nanosci Nanotechnol. 2001 Mar;1(1):101-6. doi: 10.1166/jnn.2001.004.

DOI:10.1166/jnn.2001.004

PMID:12914038

Abstract

Platelet structures with diameters less than 250 A and hexagonal symmetry were formed in GaN by high dose Mn+ ion implantation and annealing at 700-1000 degrees C. Selected-area diffraction pattern analysis indicates that these regions are GaxMn1-xN with a different lattice constant to the host GaN. The presence of the GaMnN corresponds to ferromagnetic behavior of the samples with a Curie temperature of approximately 250 K.

摘要

通过高剂量Mn⁺离子注入并在700 - 1000摄氏度下退火，在氮化镓（GaN）中形成了直径小于250埃且具有六边形对称性的血小板结构。选区衍射图案分析表明，这些区域是晶格常数与主体GaN不同的GaxMn1 - xN。GaMnN的存在对应于居里温度约为250 K的样品的铁磁行为。