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从高污染水体中分离出的真菌卢格敦海氏菌和拟白轮枝菌对镉和锌的反应

Cadmium and zinc response of the fungi Heliscus lugdunensis and Verticillium cf. alboatrum isolated from highly polluted water.

作者信息

Jaeckel Petra, Krauss Gerd-Joachim, Krauss Gudrun

机构信息

UFZ Centre for Environmental Research Leipzig-Halle in the Helmholtz Association, Department of Groundwater Microbiology, Theodor-Lieser-Str. 4, 06120 Halle/Saale, Germany.

出版信息

Sci Total Environ. 2005 Jun 15;346(1-3):274-9. doi: 10.1016/j.scitotenv.2004.12.082.

Abstract

The aquatic hyphomycete Heliscus lugdunensis and the terrestrial fungus Verticillium cf. alboatrum, both isolated from a highly polluted surface water, were investigated for their tolerance against Cd and Zn. Hl-H4 showed a 50% growth inhibition at 0.1 mM Cd, whereas at 0.7 mM Cd the growth of Va-H4 was only reduced by 30%. The fungi also showed a remarkable difference in their Zn-tolerance. The growth of Va-H4 was not inhibited at 1 mM Zn, whereas for Hl-H4 no growth occurred above 0.3 mM Zn. The biosorption and accumulation capacities for Cd or Zn of both fungi differed between the fungal species. In a 0.1 mM Cd-medium Hl-H4 biosorbed 15-fold and accumulated 39-fold more Cd than Va-H4. Exposure to 0.3 mM Zn resulted in a 13-fold higher biosorption and 11-fold higher accumulation for Hl-H4 than Va-H4. As glutathione (GSH) is known to be involved in the phytochelatin synthesis and other stress related processes we investigated its synthesis. Both fungi increased their synthesis of GSH in response to Cd. For Hl-H4 a concentration of 0.0125 mM Cd, corresponding to an intracellular Cd content of 2.1 nmol Cd mg(-1) dw, increased the GSH content, whereas Va-H4 only responded with a higher production of GSH at 1 mM Cd and a concomitant intracellular Cd content of 22.5 nmol Cd mg(-1) dw. An increased GSH synthesis under Zn-stress was only detectable for Va-H4 (20 mM).

摘要

从高度污染的地表水分离出的水生真菌卢氏螺旋黏菌(Heliscus lugdunensis)和陆地真菌拟黄萎轮枝菌(Verticillium cf. alboatrum),对它们耐受镉和锌的能力进行了研究。Hl-H4在0.1 mM镉浓度下生长受到50%的抑制,而在0.7 mM镉浓度下,Va-H4的生长仅减少了30%。这两种真菌在耐受锌的能力上也表现出显著差异。Va-H4在1 mM锌浓度下生长未受抑制,而对于Hl-H4,锌浓度高于0.3 mM时则不生长。两种真菌对镉或锌的生物吸附和积累能力因真菌种类而异。在0.1 mM镉培养基中,Hl-H4对镉的生物吸附量是Va-H4的15倍,积累量是Va-H4的39倍。暴露于0.3 mM锌时,Hl-H4的生物吸附量比Va-H4高13倍,积累量高11倍。由于已知谷胱甘肽(GSH)参与植物螯合素的合成及其他与胁迫相关的过程,我们对其合成进行了研究。两种真菌对镉胁迫的反应都是增加GSH的合成。对于Hl-H4,0.0125 mM镉浓度(对应细胞内镉含量为2.1 nmol镉·mg⁻¹干重)可增加GSH含量,而Va-H4仅在镉浓度为1 mM(对应细胞内镉含量为22.5 nmol镉·mg⁻¹干重)时GSH产量才会增加。仅在Va-H4(20 mM)中检测到锌胁迫下GSH合成增加。

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