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具有叉指式和交叉点电极结构的压阻式聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐压力传感器的表征

Characterization of piezoresistive PEDOT:PSS pressure sensors with inter-digitated and cross-point electrode structures.

作者信息

Wang Jer-Chyi, Karmakar Rajat Subhra, Lu Yu-Jen, Huang Chiung-Yin, Wei Kuo-Chen

机构信息

Department of Electronic Engineering, Chang Gung University, Kweishan 33302, Taoyuan, Taiwan.

Department of Neurosurgery, Chang Gung Memorial Hospital, Kweishan 33305, Taoyuan, Taiwan.

出版信息

Sensors (Basel). 2015 Jan 5;15(1):818-31. doi: 10.3390/s150100818.

DOI:10.3390/s150100818
PMID:25569756
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4327051/
Abstract

The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications.

摘要

研究了具有叉指式（IDE）和交叉点电极（CPE）结构的聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS）压力传感器的压阻特性。由于单载流子传导路径，观察到没有底部氧化铟锡（b-ITO）薄膜的IDE压力传感器和具有CPE结构的压力传感器的电阻有微小变化。对于带有b-ITO的IDE压力传感器，其在低压和高压下的压阻特性分别与没有b-ITO的IDE压力传感器和具有CPE结构的压力传感器相似，随着PEDOT:PSS薄膜厚度的减小，压阻压力灵敏度增加。实现了超过42 kΩ/Pa的最大灵敏度。施加常压时，PEDOT:PSS薄膜内导电点数量的增加或PEDOT低聚物之间距离的减小导致电阻降低。具有单载流子传导路径的压阻压力传感器，即没有b-ITO的IDE和CPE结构，表现出较短的弛豫时间和出色的可逆操作，这对于快速压阻响应应用可能是有利的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/83ba8ab153d7/sensors-15-00818f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/f4ffc89a1a3f/sensors-15-00818f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/b1bc960b4cb9/sensors-15-00818f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/316b3f307e51/sensors-15-00818f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/383f1353f43d/sensors-15-00818f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/261023b43dba/sensors-15-00818f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/73f1b779990a/sensors-15-00818f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/4afbd5976b11/sensors-15-00818f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/1915f8bdeea3/sensors-15-00818f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/83ba8ab153d7/sensors-15-00818f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/f4ffc89a1a3f/sensors-15-00818f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/b1bc960b4cb9/sensors-15-00818f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/316b3f307e51/sensors-15-00818f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/383f1353f43d/sensors-15-00818f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/261023b43dba/sensors-15-00818f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/73f1b779990a/sensors-15-00818f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/4afbd5976b11/sensors-15-00818f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/1915f8bdeea3/sensors-15-00818f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1421/4327051/83ba8ab153d7/sensors-15-00818f9.jpg

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