Arslan I, Yates T J V, Browning N D, Midgley P A
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
Science. 2005 Sep 30;309(5744):2195-8. doi: 10.1126/science.1116745.
Nanotechnology creates a new challenge for materials characterization because device properties now depend on size and shape as much as they depend on the traditional parameters of structure and composition. Here we show that Z-contrast tomography in the scanning transmission electron microscope has been developed to determine the complete three-dimensional size and shape of embedded structures with a resolution of approximately 1 cubic nanometer. The results from a tin/silicon quantum dot system show that the positions of the quantum dots and their size, shape, structure, and formation mechanism can be determined directly. These methods are applicable to any system, providing a unique and versatile three-dimensional visualization tool.
纳米技术给材料表征带来了新的挑战,因为器件特性如今对尺寸和形状的依赖程度与对结构和成分等传统参数的依赖程度相当。在此我们表明,扫描透射电子显微镜中的Z衬度断层成像技术已得到发展,能够以约1立方纳米的分辨率确定嵌入结构的完整三维尺寸和形状。来自锡/硅量子点系统的结果表明,量子点的位置及其尺寸、形状、结构和形成机制都可以直接确定。这些方法适用于任何系统,提供了一种独特且通用的三维可视化工具。