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嵌入立方氮化硼晶体中的小金刚石立方α-Sn纳米晶体的微观结构与传导电子量子特性

Microstructure and Conduction Electron Quantum Properties of Small Diamond Cubic α-Sn Nanocrystals Embedded in Cubic Boron Nitride Crystals.

作者信息

Nistor Sergiu V, Nistor Leona C, Stefan Mariana, Joita Alexandra C

机构信息

National Institute of Materials Physics, Atomistilor 405A, 077125Magurele, Romania.

Faculty of Physics, University of Bucharest, Atomistilor 405, 077125Magurele, Romania.

出版信息

ACS Omega. 2022 Nov 11;7(46):41981-41996. doi: 10.1021/acsomega.2c03785. eCollection 2022 Nov 22.

Abstract

The morphology, structure, composition, and conduction electron properties of quasi-spherical tin nanocrystals (NCs) of 2.5 nm average diameter, with unstrained, bulk-like α-Sn diamond cubic structure, observed in dark cubic boron nitride (cBN) crystallites, were determined by correlated analytical high-resolution scanning transmission electron microscopy and multifrequency electron spin resonance (ESR) investigations. The narrow Lorentzian ESR line with = 2.0028 is attributed to the conduction ESR of the α-Sn NCs, consistent with the temperature- and frequency-independent small -shift and intensity reduction under high temperature (950 °C) vacuum annealing when the α-Sn NCs are thermally dissolved in the host cBN crystallites. The ESR linewidth and line intensity temperature dependences recorded in the 20 to 295 K range are quantitatively described considering the presence of discrete, quantum confinement-induced conduction electron energy levels with Δ/ = 125 K separation, close to the theoretical value for conductive α-Sn NCs of 2.5 nm in diameter. The observed properties are tentatively explained with the predicted nanosize induced band-gap opening and change of band ordering from bulk α-Sn to small unstrained α-Sn NCs, resulting in a topological phase transition that also explains the predominantly s-like character of the conduction band electron orbitals.

摘要

通过相关分析高分辨率扫描透射电子显微镜和多频电子自旋共振(ESR)研究,确定了在暗立方氮化硼(cBN)微晶中观察到的平均直径为2.5 nm、具有无应变体相α-Sn金刚石立方结构的准球形锡纳米晶体(NCs)的形态、结构、组成和传导电子性质。具有g = 2.0028的窄洛伦兹ESR线归因于α-Sn NCs的传导ESR,这与当α-Sn NCs在高温(950°C)真空退火时热溶解在主体cBN微晶中时,与温度和频率无关的小位移和强度降低一致。考虑到存在离散的、量子限制诱导的传导电子能级,其间距Δ/ k = 125 K,接近直径为2.5 nm的导电α-Sn NCs的理论值,定量描述了在20至295 K范围内记录的ESR线宽和线强度的温度依赖性。观察到的性质初步用预测的纳米尺寸诱导带隙打开和从体相α-Sn到小无应变α-Sn NCs的能带排序变化来解释,这导致了拓扑相变,也解释了导带电子轨道主要的s类特征。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/78f4/9685771/fa574ef8adb8/ao2c03785_0002.jpg

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