Weissenrieder J, Kaya S, Lu J-L, Gao H-J, Shaikhutdinov S, Freund H-J, Sierka M, Todorova T K, Sauer J
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany.
Phys Rev Lett. 2005 Aug 12;95(7):076103. doi: 10.1103/PhysRevLett.95.076103.
The structure of a thin single crystalline SiO(2) film grown on Mo(112) has been studied by scanning tunneling microscopy, infrared reflection absorption spectroscopy, and x-ray photoelectron spectroscopy. In excellent agreement with the experimental results, density functional theory calculations show that the film consists of a two-dimensional network of corner sharing [SiO(4)] tetrahedra, with one oxygen of each tetrahedron binding to the protruding Mo atoms of the Mo(112) surface.
通过扫描隧道显微镜、红外反射吸收光谱和X射线光电子能谱研究了在Mo(112)上生长的薄单晶硅氧化物(SiO₂)薄膜的结构。密度泛函理论计算结果与实验结果高度吻合，表明该薄膜由角共享[SiO₄]四面体的二维网络组成，每个四面体的一个氧原子与Mo(112)表面突出的Mo原子结合。
