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在有机-金属界面利用强电子受体实现优化的空穴注入。

Optimized hole injection with strong electron acceptors at organic-metal interfaces.

作者信息

Koch Norbert, Duhm Steffen, Rabe Jürgen P, Vollmer Antje, Johnson Robert L

机构信息

Institut für Physik, Humboldt-Universität zu Berlin, Newtonstrasse 15, D-12489 Berlin, Germany.

出版信息

Phys Rev Lett. 2005 Dec 2;95(23):237601. doi: 10.1103/PhysRevLett.95.237601. Epub 2005 Nov 30.

Abstract

The energy-level alignment at interfaces between three electroactive conjugated organic materials and Au was systematically varied by adjusting the precoverage of the metal substrate with the electron acceptor tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Photoelectron spectroscopy revealed that electron transfer from Au to adsorbed F4-TCNQ was responsible for lowering the hole-injection barrier by as much as 1.2 eV. This novel interface modification scheme is independent of the charge transfer complex formation ability of the organic materials with the electron acceptor.

摘要

通过调节金属基底与电子受体四氟 - 四氰基对苯二醌二甲烷(F4 - TCNQ)的预覆盖度,系统地改变了三种电活性共轭有机材料与金之间界面处的能级排列。光电子能谱表明,从金到吸附的F4 - TCNQ的电子转移使得空穴注入势垒降低了多达1.2 eV。这种新颖的界面修饰方案与有机材料与电子受体形成电荷转移复合物的能力无关。

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