N.I. Vavilov Institute of General Genetics, USSR Academy of Sciences, Gubkin Str. 3. 117984, Moscow B-334, USSR.
EMBO J. 1985 Dec 30;4(13B):3773-9. doi: 10.1002/j.1460-2075.1985.tb04147.x.
Transposition outbursts occur in the destabilized Drosophila melanogaster strain ct carrying a mutation in the locus cut induced by an insertion of mdg4. While the distribution of mobile genetic elements remained unchanged in the great majority of germ cells, in a few cells numerous transpositions had occurred involving mdg (copia-like), fold-back and P-elements. We used in situ hybridization to analyze the distribution of five families of mdg elements in the X-chromosome during several consequent mutational changes in D. melanogaster. Each of them was accompanied by many changes in mdg localization, all of which occurred in one and the same cell. Thus, we could observe the series consisting of up to five successive transposition explosions leading to an almost complete change in the distribution of the mdg elements tested. We also found that in the course of successive transposition explosions, mdg elements often inserted into those sub-sections of the X-chromosome where they had previously been located. This phenomenon, designated as reverse directed transposition, was studied in more detail on insertion into the locus yellow. The rate of reverse transposition of the same mdg element to the corresponding locus was 10-100 times as high as that of primary insertion. In some cases, ;the transposon shuttle' into and out of the locus was observed. The existence of ;transposition memory' partially explains the specificity of mdg localization in closely related strains as well as the co-ordinated behaviour of different mdg elements in independent transposition explosions. The evolutionary significance of transposition explosions and directed reverse transposition (transposon shuttle) is discussed.
转座爆发发生在携带由 mdg4 插入诱导的突变的不稳定 Drosophila melanogaster 品系 ct 中。虽然在绝大多数生殖细胞中移动遗传元件的分布保持不变,但在少数细胞中,涉及 mdg(类似 copia)、折叠回和 P 元件的许多转座已经发生。我们使用原位杂交技术来分析在 D. melanogaster 的几个连续突变中,X 染色体上五个 mdg 元件家族的分布。它们中的每一个都伴随着 mdg 定位的许多变化,所有这些变化都发生在同一个细胞中。因此,我们可以观察到由多达五个连续的转座爆炸组成的系列,导致测试的 mdg 元件的分布几乎完全改变。我们还发现,在连续的转座爆炸过程中,mdg 元件经常插入到它们以前所在的 X 染色体的那些亚区。这种现象,称为反向定向转座,在插入 yellow 基因座时进行了更详细的研究。相同的 mdg 元件向相应基因座的反向转座率比初次插入高 10-100 倍。在某些情况下,观察到“转座子穿梭”进入和离开基因座。“转座记忆”的存在部分解释了 mdg 在密切相关的品系中的定位特异性,以及不同 mdg 元件在独立转座爆炸中的协调行为。讨论了转座爆发和定向反向转座(转座子穿梭)的进化意义。