气-固生长的ZnO直纳米线的物理和电学性能

Physical and Electrical Performance of Vapor-Solid Grown ZnO Straight Nanowires.

作者信息

Li J Y, Li H

出版信息

Nanoscale Res Lett. 2008 Dec 3;4(2):165-168. doi: 10.1007/s11671-008-9218-1.

DOI:10.1007/s11671-008-9218-1

PMID:20596357

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC2894214/

Abstract

Physical and electrical properties of wurtzitic ZnO straight nanowires grown via a vapor-solid mechanism were investigated. Raman spectrum shows four first-order phonon frequencies and a second-order Raman frequency of the ZnO nanowires. Electrical and photoconductive performance of individual ZnO straight nanowire devices was studied. The results indicate that the nanowires reported here are n-type semi-conductors and UV light sensitive, and a desirable candidate for fabricating UV light nanosensors and other applications.

摘要

研究了通过气-固机制生长的纤锌矿型氧化锌直纳米线的物理和电学性质。拉曼光谱显示了氧化锌纳米线的四个一阶声子频率和一个二阶拉曼频率。研究了单个氧化锌直纳米线器件的电学和光电导性能。结果表明，这里报道的纳米线是n型半导体且对紫外光敏感，是制造紫外光纳米传感器及其他应用的理想候选材料。