Ando Taro, Ohtake Yoshiyuki, Ohtani Naoki
The 1st Research Group, Central Research Laboratory, Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamamatsu-City, Shizuoka, 434-8601, Japan.
Phys Rev E Stat Nonlin Soft Matter Phys. 2006 Jun;73(6 Pt 2):066702. doi: 10.1103/PhysRevE.73.066702. Epub 2006 Jun 5.
We develop a numerical scheme for solving the time-dependent Kohn-Sham equation in semiconductor heterostructures. Based on the efficient and accurate method recently proposed by Watanabe and Tsukada [Phys. Rev. E 65, 036705 (2002)], an extension is made for treating effective-mass mismatch between different semiconductor materials. A demonstrative calculation shows that the energy of the quantum-well state is accurately conserved during the time-evolution calculation with the present method. Examples under the existence of Hartree and exchange-correlation interactions are also shown as demonstrations of nonlinear electron dynamics in quantum wells. The present method is particularly useful for analyzing nonlinear coherent charge oscillations in semiconductor quantum wells, taking into account many-body effects.
我们开发了一种用于求解半导体异质结构中含时Kohn-Sham方程的数值方案。基于渡边和冢田最近提出的高效精确方法[《物理评论E》65, 036705 (2002)],对其进行了扩展以处理不同半导体材料之间的有效质量失配问题。一个示范性计算表明,使用本方法在时间演化计算过程中量子阱态的能量能被精确守恒。还给出了存在哈特里和交换关联相互作用情况下的示例,作为量子阱中非线性电子动力学的演示。考虑到多体效应,本方法对于分析半导体量子阱中的非线性相干电荷振荡特别有用。