Zhang D W, Colombini M
Department of Zoology, University of Maryland, College Park 20742.
Biochim Biophys Acta. 1990 Jun 27;1025(2):127-34. doi: 10.1016/0005-2736(90)90089-7.
The voltage-dependent, anion-selective mitochondrial channel, VDAC, undergoes two different conformational changes from the open to a closed state under positive and negative applied electric fields. Micromolar quantities of aluminum hydroxide and other metal trihydroxides have recently been shown to be able to inhibit this voltage-dependent closure (Dill et al. (1987) J. Membr. Biol. 99, 187-196; Zhang and Colombini (1989) Biochim. Biophys. Acta 991, 68-78). It was suggested that the inhibition results from the neutralization of the positively charged voltage sensors by the metal species. In the present study, the dynamics of the metal-binding site accompanying channel closure was investigated by adding In(OH)3 to only one side of the membrane and examining its effect on the channel's gating processes. Indium added to open channels inhibited channel closure only when the metal-containing side was on the lower potential side of the applied field. If indium was added only to the higher-potential side, the channels closed and tended to remain closed after the field was abolished. The addition of metal hydroxide after closing the channels with a negative potential on the metal side did not result in channel re-opening as would be expected for sensor neutralization. Inhibition occurred immediately, however, if the channels were first allowed to open briefly. The closed-state selectivity seemed to be very similar in the absence or presence of the metal, indicating that the metal-binding sites are not located within the pore of the channel in the closed conformation. The results are consistent with a voltage-dependent translocation across the membrane of each of two metal-binding sites on VDAC. This translocation is tightly coupled with channel opening and closing.
电压依赖性阴离子选择性线粒体通道(VDAC)在施加正电场和负电场时会经历两种不同的从开放状态到关闭状态的构象变化。最近研究表明,微摩尔量的氢氧化铝和其他金属三氢氧化物能够抑制这种电压依赖性关闭(Dill等人,(1987年)《膜生物学杂志》99卷,187 - 196页;Zhang和Colombini,(1989年)《生物化学与生物物理学报》991卷,68 - 78页)。有人提出,这种抑制作用是由于金属物种中和了带正电的电压传感器所致。在本研究中,通过仅在膜的一侧添加In(OH)₃并检查其对通道门控过程的影响,研究了通道关闭时金属结合位点的动力学。添加到开放通道的铟仅在含金属一侧处于施加电场的低电位侧时才抑制通道关闭。如果仅在高电位侧添加铟,通道会关闭,并且在电场消除后倾向于保持关闭状态。在用金属侧的负电位关闭通道后添加金属氢氧化物,并没有像传感器中和所预期的那样导致通道重新开放。然而,如果首先让通道短暂开放,则会立即发生抑制作用。在不存在或存在金属的情况下,关闭状态的选择性似乎非常相似,这表明金属结合位点在关闭构象时并不位于通道孔内。这些结果与VDAC上两个金属结合位点中的每一个跨膜的电压依赖性转运一致。这种转运与通道的开放和关闭紧密耦合。