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电压依赖性阴离子通道的电压门控过程对离子流敏感。

The voltage-gating process of the voltage-dependent anion channel is sensitive to ion flow.

作者信息

Zizi M, Byrd C, Boxus R, Colombini M

机构信息

Department of Physiology, K.U. Leuven Medical School, Campus Gasthuijsberg, Leuven 3000, Belgium.

出版信息

Biophys J. 1998 Aug;75(2):704-13. doi: 10.1016/S0006-3495(98)77560-5.

Abstract

The voltage-dependent anion channel (VDAC) is a voltage-gated channel from the mitochondrial outer membrane. It has two gating processes: one at positive potentials and the other at negative potentials. The energetics of VDAC gating are quite different when measured in the presence or absence of an ion gradient. A positive potential on the high-salt side results in channel closure at lower transmembrane potentials. The midpoint potential (V0) shifted from 25 to 5.7 mV, with an activity gradient for KCl of 0.6 versus 0.06. The opposite occurred for negative potentials on the high-salt side (V0 shifted from -25 to -29 mV). Thus the salt gradient favored closure for one gating process and opening for the other. These results could be explained if part of the electrochemical potential of the gradients present were transferred to the gating mechanism. If the kinetic energy of the ion flow were coupled to the gating process, the effects of the gradient would depend on the mass and velocities of these ions. This was tested by using a series of different salts (KCl, NaCl, LiCl, KBr, K acetate, Na butyrate, and RbBr) under an identical activity gradient. The kinetic energy correlated very well with the measured shifts in free energy of the channel gating. This was true for both polarities. Thus the gating of VDAC is influenced by ion flow. These results are consistent in sign and direction with the voltage gating process in VDAC, which is believed to involve the movement of a positively charged portion of the wall of the channel out of the membrane.

摘要

电压依赖性阴离子通道(VDAC)是线粒体外膜上的一种电压门控通道。它有两个门控过程:一个在正电位时,另一个在负电位时。在有或没有离子梯度的情况下测量时,VDAC门控的能量学有很大不同。高盐侧的正电位会导致通道在较低跨膜电位时关闭。中点电位(V0)从25 mV移至5.7 mV,KCl的活性梯度为0.6对0.06。高盐侧负电位时情况相反(V0从-25 mV移至-29 mV)。因此,盐梯度有利于一个门控过程的关闭而有利于另一个门控过程的开放。如果存在的梯度的部分电化学势转移到门控机制中,这些结果就可以得到解释。如果离子流的动能与门控过程耦合,梯度的影响将取决于这些离子的质量和速度。通过在相同活性梯度下使用一系列不同的盐(KCl、NaCl、LiCl、KBr、乙酸钾、丁酸钠和RbBr)对此进行了测试。动能与通道门控自由能的测量变化非常好地相关。两种极性都是如此。因此,VDAC的门控受离子流影响。这些结果在符号和方向上与VDAC中的电压门控过程一致,据信该过程涉及通道壁带正电部分移出膜的移动。

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Conductance hysteresis in the voltage-dependent anion channel.电压依赖性阴离子通道中的电导滞后现象。
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