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理解表面化学对烷基封端(C1 - C18)微机械硅谐振器中机械能量耗散的影响。

Understanding the effects of surface chemistry on Q: mechanical energy dissipation in alkyl-terminated (C1-C18) micromechanical silicon resonators.

作者信息

Henry Joshua A, Wang Yu, Sengupta Debodhonyaa, Hines Melissa A

机构信息

Department of Chemistry, Baker Laboratory, Cornell University, Ithaca, New York 14853-1301, USA.

出版信息

J Phys Chem B. 2007 Jan 11;111(1):88-94. doi: 10.1021/jp0654011.

Abstract

The rate of mechanical energy dissipation in 300-nm-thick, megahertz-range micromechanical silicon resonators is sensitive to single monolayer changes in surface chemistry. Resonators terminated with a single monolayer of methyl groups have significantly higher quality factors (Q's), and thus lower mechanical energy dissipation, than comparable resonators terminated with either long-chain alkyl monolayers (C2H2n+1, n = 2-18) or monolayers of hydrogen atoms. This effect cannot be attributed to mechanical energy dissipation within the alkyl monolayer, as a 9-fold increase in alkyl chain length does not lead to an observable increase in dissipation. Similarly, this effect is not correlated with the chemical structure of the silicon-monolayer interface (e.g., the density of Si-H vs Si-C bonds.) Instead, the chemical trends in resonator quality and stability are consistent with a dissipation mechanism involving the coupling of long-range strain fields to localized, electronically active defects in the monolayer coatings.

摘要

在厚度为300纳米、处于兆赫兹范围的微机械硅谐振器中,机械能耗散率对表面化学的单分子层变化很敏感。与用长链烷基单分子层(C2H2n + 1,n = 2 - 18)或氢原子单分子层终止的类似谐振器相比,用甲基单分子层终止的谐振器具有显著更高的品质因数(Q值),因此机械能耗散更低。这种效应不能归因于烷基单分子层内的机械能耗散,因为烷基链长度增加9倍并不会导致可观察到的耗散增加。同样,这种效应与硅 - 单分子层界面的化学结构(例如,Si - H键与Si - C键的密度)无关。相反,谐振器品质和稳定性的化学趋势与一种耗散机制一致,该机制涉及长程应变场与单分子层涂层中局部电子活性缺陷的耦合。

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