Peng Hailin, Meister Stefan, Chan Candace K, Zhang Xiao Feng, Cui Yi
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
Nano Lett. 2007 Jan;7(1):199-203. doi: 10.1021/nl062047+.
Layer-structured group III chalcogenides have highly anisotropic properties and are attractive materials for stable photocathodes and battery electrodes. We report the controlled synthesis and characterization of layer-structured GaSe nanowires via a catalyst-assisted vapor-liquid-solid (VLS) growth mechanism during GaSe powder evaporation. GaSe nanowires consist of Se-Ga-Ga-Se layers stacked together via van der Waals interactions to form belt-shaped nanowires with a growth direction along the [11-20], width along the [1-100], and height along the [0001] direction. Nanobelts exhibit a variety of morphologies including straight, zigzag, and saw-tooth shapes. These morphologies are realized by controlling the growth temperature and time so that the actual catalysts have a chemical composition of Au, Au-Ga alloy, or Ga. The participation of Ga in the VLS catalyst is important for achieving different morphologies of GaSe. In addition, GaSe nanotubes are also prepared by a slow growth process.
层状结构的III族硫属化物具有高度各向异性的特性，是用于稳定光阴极和电池电极的有吸引力的材料。我们报告了在GaSe粉末蒸发过程中，通过催化剂辅助的气-液-固（VLS）生长机制对层状结构GaSe纳米线进行的可控合成与表征。GaSe纳米线由通过范德华相互作用堆叠在一起的Se-Ga-Ga-Se层组成，形成带状纳米线，其生长方向沿[11-20]，宽度沿[1-100]，高度沿[0001]方向。纳米带呈现出多种形态，包括直的、之字形的和锯齿形的。通过控制生长温度和时间来实现这些形态，使得实际催化剂的化学组成为Au、Au-Ga合金或Ga。Ga参与VLS催化剂对于实现GaSe的不同形态很重要。此外，还通过缓慢生长过程制备了GaSe纳米管。
