Marumoto Kazuhiro, Kuroda Shin-ichi, Takenobu Taishi, Iwasa Yoshihiro
Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan.
Phys Rev Lett. 2006 Dec 22;97(25):256603. doi: 10.1103/PhysRevLett.97.256603.
An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
一种电子自旋共振（ESR）方法被应用于并五苯场效应器件，以研究此类器件中栅极诱导的空穴载流子。观察到清晰的场诱导ESR信号，表明所有场注入的载流子都具有S = 1/2自旋。由于未成对π电子产生的各向异性ESR信号显示了器件界面处的分子取向。考虑到超精细结构，从ESR线宽评估载流子自旋密度分布（波函数）的空间范围约为10个分子的量级。
