Minot Ethan D, Kelkensberg Freek, van Kouwen Maarten, van Dam Jorden A, Kouwenhoven Leo P, Zwiller Valery, Borgström Magnus T, Wunnicke Olaf, Verheijen Marcel A, Bakkers Erik P A M
Kavli Institute of Nanoscience, Delft, The Netherlands.
Nano Lett. 2007 Feb;7(2):367-71. doi: 10.1021/nl062483w.
We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operation of these nanoLEDs with a consistent series of experiments at room temperature and at 10 K, demonstrating the potential of this system for single photon applications.
我们报道了可重复制备的磷化铟-砷化铟磷纳米线发光二极管,其中电子-空穴复合被限制在量子点尺寸的砷化铟磷区域。纳米线的几何结构使量子点与纳米线的n型磷化铟和p型磷化铟端自然自对准,使这些器件成为电驱动量子光学实验的有前景的候选者。我们通过在室温及10 K下进行的一系列连贯实验研究了这些纳米发光二极管的运行情况,证明了该系统在单光子应用方面的潜力。