肼辅助制备磷化铟（InP）基纳米线及核壳复合材料。

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites.

作者信息

Patzke Greta R, Kontic Roman, Shiolashvili Zeinab, Makhatadze Nino, Jishiashvili David

机构信息

Institute of Inorganic Chemistry, University of Zurich, Winterthurerstr. 190, Zurich CH-8057, Switzerland.

Institute of Cybernetics, Georgian Technical University, Euli Str. 5, Tbilisi 0186, Georgia.

出版信息

Materials (Basel). 2012 Dec 27;6(1):85-100. doi: 10.3390/ma6010085.

DOI:10.3390/ma6010085

PMID:28809296

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5452112/

Abstract

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP-Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics.

摘要

磷化铟纳米线（InP NWs）可通过一种新颖的气相沉积方法在440°C下由结晶InP源在含有3 mol% H₂O的肼气氛中制备得到。直径约20 nm、长度可达几十微米的均匀闪锌矿（ZB）InP NWs优选沉积在硅衬底上。InP颗粒尺寸随沉积温度进一步增大。该直接方法扩展到了由混合InP/Ga源材料一步形成新型核壳InP-Ga NWs。在约350°C的低沉积温度下可获得直径低于20 nm且具有非晶氧化镓壳层的复合纳米电缆。此外，InP/Zn源在稍高温度（400°C）下通过类似装置提供具有非晶Zn/P/O涂层的InP NWs。在450°C时，InP-Zn NWs的光滑外层转变为珠状涂层。关键半导体InP与各向同性绝缘体壳层材料的新型组合为纳米电子学开辟了有趣的应用前景。