Jena Debdeep, Konar Aniruddha
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA.
Phys Rev Lett. 2007 Mar 30;98(13):136805. doi: 10.1103/PhysRevLett.98.136805.
We propose a technique for achieving large improvements in carrier mobilities in 2- and 1-dimensional semiconductor nanostructures by modifying their dielectric environments. We show that by coating the nanostructures with high-kappa dielectrics, scattering from Coulombic impurities can be strongly damped. Though screening is also weakened, the damping of Coulombic scattering is much larger, and the resulting improvement in mobilities of carriers can be as much as an order of magnitude for thin 2D semiconductor membranes, and more for semiconductor nanowires.
我们提出了一种通过改变二维和一维半导体纳米结构的介电环境来大幅提高载流子迁移率的技术。我们表明，通过用高介电常数电介质包覆纳米结构，可以显著抑制库仑杂质散射。虽然屏蔽作用也会减弱，但库仑散射的抑制作用要大得多，对于二维半导体薄膜，载流子迁移率的提高可达一个数量级，对于半导体纳米线，提高幅度更大。
