van Loon Erik G C P, Schüler Malte, Springer Daniel, Sangiovanni Giorgio, Tomczak Jan M, Wehling Tim O
Mathematical Physics Division, Department of Physics, Lund University, Lund, Sweden.
Institut für Theoretische Physik, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany.
NPJ 2D Mater Appl. 2023;7(1):47. doi: 10.1038/s41699-023-00408-x. Epub 2023 Jul 6.
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
二维材料会受到其周围环境的强烈影响。介电环境会屏蔽并减弱二维材料中电子之间的库仑相互作用。由于在莫特材料中库仑相互作用决定了绝缘态，因此操控介电屏蔽可直接控制莫特特性。我们的多体计算揭示了这种库仑工程的光谱特征：我们证明了哈伯德带位置发生了电子伏特量级的变化，并展示了通过库仑工程实现的绝缘体到金属的转变。基于我们的原理验证计算，我们讨论了在实验中实现我们的莫特材料库仑工程方案的（可行）条件。
