Tong Lijia, He Junjie, Yang Min, Chen Zheng, Zhang Jing, Lu Yanli, Zhao Ziyuan
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, P. R. China.
Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, 128 43 Prague 2, Czech Republic.
Phys Chem Chem Phys. 2017 Aug 30;19(34):23492-23496. doi: 10.1039/c7cp04117a.
Developing nanoelectronic engineering requires two-dimensional (2d) materials with both usable carrier mobility and proper large band-gap. In this study, we present a detailed theoretical investigation of the intrinsic carrier mobilities of buckled 2d GaN. This buckled 2d GaN is accessed by hydrofluorination (FGaNH) and hydrogenation (HGaNH). We predict that the anisotropic carrier mobilities of buckled 2d GaN can exceed those of 2d MoS and can be altered by an alterable surface chemical bond (convert from a Ga-F-Ga bond of FGaNH to a Ga-H bond of HGaNH). Moreover, converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from a p-type-like semiconductor (FGaNH) to an n-type-like semiconductor (HGaNH). These features make buckled 2d GaN a promising candidate for application in future conductivity-adjustable electronics.
发展纳米电子工程需要具有可用载流子迁移率和合适大带隙的二维（2D）材料。在本研究中，我们对屈曲二维氮化镓的本征载流子迁移率进行了详细的理论研究。这种屈曲二维氮化镓可通过氢氟化（FGaNH）和氢化（HGaNH）获得。我们预测，屈曲二维氮化镓的各向异性载流子迁移率可能超过二维二硫化钼，并且可以通过可改变的表面化学键（从FGaNH的Ga-F-Ga键转变为HGaNH的Ga-H键）来改变。此外，将FGaNH转变为HGaNH可以显著抑制空穴迁移率（甚至接近零），并导致从类p型半导体（FGaNH）转变为类n型半导体（HGaNH）。这些特性使屈曲二维氮化镓成为未来电导率可调电子器件应用的有前途的候选材料。
