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室温可逆自旋霍尔效应。

Room-temperature reversible spin Hall effect.

作者信息

Kimura T, Otani Y, Sato T, Takahashi S, Maekawa S

机构信息

Institute for Solid State Physics, University of Tokyo 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.

出版信息

Phys Rev Lett. 2007 Apr 13;98(15):156601. doi: 10.1103/PhysRevLett.98.156601. Epub 2007 Apr 12.

Abstract

Reversible spin Hall effect comprising the direct and inverse spin Hall effects was electrically detected at room temperature. A platinum wire with a strong spin-orbit interaction is used not only as a spin current absorber but also as a spin-current source in the specially designed lateral structure. The obtained spin Hall conductivities are 2.4 x 10(4) (Omega m)(-1) at room temperature, 10(4) times larger than the previously reported values of semiconductor systems. Spin Hall conductivities obtained from both the direct and inverse spin Hall effects are experimentally confirmed to be the same, demonstrating the Onsager reciprocal relations between spin and charge currents.

摘要

在室温下通过电学方法检测到了包含直接和逆自旋霍尔效应的可逆自旋霍尔效应。具有强自旋轨道相互作用的铂丝不仅用作自旋电流吸收器,还在特殊设计的横向结构中用作自旋电流源。在室温下获得的自旋霍尔电导率为2.4×10⁴(Ω·m)⁻¹,比先前报道的半导体系统的值大10⁴倍。通过实验证实,从直接和逆自旋霍尔效应获得的自旋霍尔电导率是相同的,这证明了自旋电流和电荷电流之间的昂萨格互易关系。

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