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温度补偿氮化铝兰姆波谐振器。

Temperature-compensated aluminum nitride lamb wave resonators.

机构信息

Department of Mechanical Engineering, University of California, Berkeley, CA, USA.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Mar;57(3):524-32. doi: 10.1109/TUFFC.2010.1443.

Abstract

In this paper, the temperature compensation of AlN Lamb wave resonators using edge-type reflectors is theoretically studied and experimentally demonstrated. By adding a compensating layer of SiO2 with an appropriate thickness, a Lamb wave resonator based on a stack of AlN and SiO2 layers can achieve a zero first-order temperature coefficient of frequency (TCF). Using a composite membrane consisting of 1 microm AlN and 0.83 microm SiO2, a Lamb wave resonator operating at 711 MHz exhibits a first-order TCF of -0.31 ppm/degrees C and a second-order TCF of -22.3 ppb/degrees C(2) at room temperature. The temperature-dependent fractional frequency variation is less than 250 ppm over a wide temperature range from -55 degrees C to 125 degrees C. This temperature-compensated AlN Lamb wave resonator is promising for future applications including thermally stable oscillators, filters, and sensors.

摘要

本文从理论和实验两方面研究了利用边缘反射器对氮化铝(AlN)声表面波谐振器进行温度补偿的方法。通过在 AlN 和 SiO2 堆叠层之间添加适当厚度的 SiO2 补偿层,基于 AlN 和 SiO2 层的声表面波谐振器可实现频率温度系数(TCF)为零的一阶温度补偿。采用由 1μm 厚的 AlN 和 0.83μm 厚的 SiO2 组成的复合膜,在 711MHz 工作的声表面波谐振器在室温下表现出-0.31ppm/℃的一阶 TCF 和-22.3ppb/℃2 的二阶 TCF。在-55℃至 125℃的宽温度范围内,温度相关的频率分数变化小于 250ppm。这种温度补偿的 AlN 声表面波谐振器有望应用于包括热稳定振荡器、滤波器和传感器等未来的应用中。

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