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在硅基片上制造的宽带抗反射光栅。

Broadband antireflection gratings fabricated upon silicon substrates.

作者信息

Kanamori Y, Sasaki M, Hane K

出版信息

Opt Lett. 1999 Oct 15;24(20):1422-4. doi: 10.1364/ol.24.001422.

Abstract

We fabricated a two-dimensional subwavelength structured (SWS) surface upon a crystal silicon substrate. The SWS surface was patterned by electron beam lithography and etched by an SF(6) fast atom beam. The SWS grating had a conical profile, the period was 150 nm, and the groove was approximately 350 nm deep. The reflectivity was examined at 2002500-nm wavelengths. At 400 nm the reflectivity decreased to 0.5% from the 54.7% of the silicon substrate. We also used HeNe laser light to examine the reflectivity as a function of the incident angle.

摘要

我们在晶体硅衬底上制备了二维亚波长结构(SWS)表面。通过电子束光刻对SWS表面进行图案化,并使用SF₆快原子束进行蚀刻。SWS光栅具有锥形轮廓,周期为150nm,凹槽深度约为350nm。在200 - 2500nm波长范围内检测反射率。在400nm处,反射率从硅衬底的54.7%降至0.5%。我们还使用氦氖激光来检测反射率随入射角的变化。

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