Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong, Yuseong, Daejeon 305-701, Republic of Korea.
Nanoscale Res Lett. 2014 Jan 8;9(1):9. doi: 10.1186/1556-276X-9-9.
Silicon (Si) nanostructures that exhibit a significantly low reflectance in ultraviolet (UV) and visible light wavelength regions are fabricated using a hydrogen etching process. The fabricated Si nanostructures have aperiodic subwavelength structures with pyramid-like morphologies. The detailed morphologies of the nanostructures can be controlled by changing the etching condition. The nanostructured Si exhibited much more reduced reflectance than a flat Si surface: an average reflectance of the nanostructured Si was approximately 6.8% in visible light region and a slight high reflectance of approximately 17% in UV region. The reflectance was further reduced in both UV and visible light region through the deposition of a poly(dimethylsiloxane) layer with a rough surface on the Si nanostructure: the reflectance can be decreased down to 2.5%. The enhancement of the antireflection properties was analyzed with a finite difference time domain simulation method.
使用氢蚀刻工艺制造了在紫外线 (UV) 和可见光波长区域表现出显著低反射率的硅 (Si) 纳米结构。所制造的 Si 纳米结构具有具有类金字塔形貌的非周期性亚波长结构。通过改变蚀刻条件可以控制纳米结构的详细形态。与光滑的 Si 表面相比，纳米结构化的 Si 表现出更低的反射率：纳米结构化 Si 在可见光区域的平均反射率约为 6.8%，在 UV 区域的稍高反射率约为 17%。通过在 Si 纳米结构上沉积具有粗糙表面的聚二甲基硅氧烷 (PDMS) 层，在 UV 和可见光区域进一步降低了反射率：反射率可降低至 2.5%。使用有限差分时域模拟方法分析了反反射性能的增强。
