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基于硅纳米线的铜(II)荧光传感器。

Silicon nanowires-based fluorescence sensor for Cu(II).

作者信息

Mu Lixuan, Shi Wensheng, Chang Jack C, Lee Shuit-Tong

机构信息

Laboratory of Organic Optoelectronic Functional Materials and Molecular Engineering, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100080, China.

出版信息

Nano Lett. 2008 Jan;8(1):104-9. doi: 10.1021/nl072164k. Epub 2007 Dec 21.

DOI:10.1021/nl072164k
PMID:18095729
Abstract

Si nanowires (SiNWs) were covalently modified by fluorescence ligand, N-(quinoline-8-yl)-2-(3-triethoxysilyl-propylamino)-acetamide (QlOEt) and finally formed an optical sensor to realize a highly sensitive and selective detection for Cu(II). The QlOEt-modified SiNWs sensor has sensitivity for Cu(II) down to 10(-8) M, which is more sensitive than QlOEt alone. Metal ions interferences have no observable effect on the sensitivity and selectivity of QlOEt-modified SiNWs sensor. The SiNWs-based fluorescence sensor is reversible by addition of acid to replace Cu(II). The sensing mechanisms of QlOEt-modified SiNWs to Cu(II) and the rationale for the increase in sensitivity and selectivity of QlOEt-modified SiNWs over QlOEt on Cu(II) are discussed. The current sensor structure may be extendable to other chemo- and biosensors, and even to nanosensors for direct detection of specific materials in intracellular environment.

摘要

硅纳米线(SiNWs)通过荧光配体N-(喹啉-8-基)-2-(3-三乙氧基硅基丙基氨基)乙酰胺(QlOEt)进行共价修饰,最终形成一种光学传感器,以实现对铜离子(Cu(II))的高灵敏度和高选择性检测。QlOEt修饰的SiNWs传感器对Cu(II)的检测灵敏度低至10^(-8) M,比单独的QlOEt更灵敏。金属离子干扰对QlOEt修饰的SiNWs传感器的灵敏度和选择性没有明显影响。基于SiNWs的荧光传感器通过添加酸来替换Cu(II)是可逆的。讨论了QlOEt修饰的SiNWs对Cu(II)的传感机制以及QlOEt修饰的SiNWs对Cu(II)的灵敏度和选择性高于QlOEt的原理。当前的传感器结构可能可扩展到其他化学和生物传感器,甚至可扩展到用于直接检测细胞内环境中特定物质的纳米传感器。

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