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三维硅/锗量子点晶体

Three-dimensional Si/Ge quantum dot crystals.

作者信息

Grützmacher Detlev, Fromherz Thomas, Dais Christian, Stangl Julian, Müller Elisabeth, Ekinci Yasin, Solak Harun H, Sigg Hans, Lechner Rainer T, Wintersberger Eugen, Birner Stefan, Holý Vaclav, Bauer Günther

机构信息

Institute of Bio- and Nanosystems 1, Semiconductor Nanoelectronics, Forschungszentrum Jülich, D-52425 Jülich, Germany.

出版信息

Nano Lett. 2007 Oct;7(10):3150-6. doi: 10.1021/nl0717199. Epub 2007 Sep 25.

Abstract

Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

摘要

现代纳米技术提供了创造新型人造材料的途径,拓展了物理、化学和生物学领域中器件的功能。模板化自组装已被认为是实现量子点精确定位以制造量子点阵列、分子和晶体的一种可行途径。在此,我们采用波长为λ = 13.5 nm的极紫外干涉光刻技术(EUV - IL),对具有完美周期性的模板进行快速大面积曝光。利用EUV - IL和反应离子刻蚀在Si(001)衬底上制备了二维孔阵列。在这些衬底上,通过分子束外延生长出了横向和纵向尺寸及周期均为目前最小的三维有序SiGe量子点晶体。对一个对应约3.6×10⁷个量子点的样品体积进行X射线衍射测量以及原子力显微镜(AFM)分析,结果显示量子点晶体的结构完美程度目前无与伦比,且量子点尺寸分布狭窄。在室温下均观察到了强烈的带间光致发光现象,这表明三维(3D)SiGe量子点晶体中的缺陷密度较低。将通过X射线和AFM测量确定的Ge浓度和量子点形状作为三维能带结构计算的输入参数,测量得到的和计算得到的光致发光能量之间取得了极佳的定量一致性。计算结果表明,人工周期性显著改变了三维有序量子点晶体的能带结构。基于实验确定的量子点尺寸统计变化(线性尺寸±10%)对本征能量变化进行的计算表明,相邻量子点之间的计算电子耦合并未因量子点尺寸变化而被破坏。因此,无论是从结构角度还是从能带结构角度来看,三维有序量子点都可被视为人工晶体。

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