Hass J, Varchon F, Millán-Otoya J E, Sprinkle M, Sharma N, de Heer W A, Berger C, First P N, Magaud L, Conrad E H
The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA.
Phys Rev Lett. 2008 Mar 28;100(12):125504. doi: 10.1103/PhysRevLett.100.125504.
We show experimentally that multilayer graphene grown on the carbon terminated SiC(0001[over ]) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface. Via first-principles calculation, we demonstrate that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point. This explains prior experimental results that showed single-layer electronic properties, even for epitaxial graphene films tens of layers thick.
我们通过实验表明，生长在碳端SiC(0001[上])表面的多层石墨烯包含与石墨烯-SiC界面处的外延条件相关的旋转堆垛层错。通过第一性原理计算，我们证明了这种层错在狄拉克点附近产生的电子结构与孤立的单层石墨烯片难以区分。这解释了先前的实验结果，即即使对于几十层厚的外延石墨烯薄膜，也表现出单层电子特性。
